K1S321611C, K1S321611C-FI70T, K1S32161BC-BI70 Selling Leads, Datasheet
MFG:2000 Package Cooled:BGA D/C:09+
K1S321611C, K1S321611C-FI70T, K1S32161BC-BI70 Datasheet download
Part Number: K1S321611C
MFG: 2000
Package Cooled: BGA
D/C: 09+
MFG:2000 Package Cooled:BGA D/C:09+
K1S321611C, K1S321611C-FI70T, K1S32161BC-BI70 Datasheet download
MFG: 2000
Package Cooled: BGA
D/C: 09+
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PDF/DataSheet Download
Datasheet: K1S321611C
File Size: 183865 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K1S161611A
File Size: 183832 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K1S161611A
File Size: 183832 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
The K1S321611C is fabricated by SAMSUNG¢s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN, VOUT | -0.2 to VCC+0.3V | V |
Voltage on Vcc supply relative to Vss | VCC | -0.2 to 3.6V | V |
Power Dissipation | PD | 1.0 | W |
Storage temperature | TSTG | -65 to 150 | °C |
Operating Temperature | TA | -40 to 85 | °C |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.