K1M2EF6, K1S1616B1A, K1S321611C-FI70 Selling Leads, Datasheet
MFG:SANYO Package Cooled:SOP D/C:SOP
K1M2EF6, K1S1616B1A, K1S321611C-FI70 Datasheet download
Part Number: K1M2EF6
MFG: SANYO
Package Cooled: SOP
D/C: SOP
K1M2EF6, K1S1616B1A, K1S321611C-FI70
- Table of contents:
Info of K1M2EF6
Info of K1S1616B1A
Info of K1S321611C-FI70
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About K1S1616B1A
PDF/DataSheet Download
Datasheet: K1S1616B1A
File Size: 184193 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
About K1S321611C-FI70
PDF/DataSheet Download
Datasheet: K1S321611C-FI70
File Size: 183865 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
K1S1616B1A General Description
The K1S1616B1A is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.
K1S1616B1A Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Voltage on any pin relative to Vss | VIN, VOUT | -0.2 to VCC+0.3V | V |
| Voltage on Vcc supply relative to Vss | VCC | -0.2 to 2.5V | V |
| Power Dissipation | PD | 1.0 | W |
| Storage temperature | TSTG | -65 to 150 | °C |
| Operating Temperature | TA | -40 to 85 | °C |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.
K1S1616B1A Features
· Process Technology: CMOS
· Organization: 1M x16 bit
· Power Supply Voltage: 1.7V~2.1V
· Three State Outputs
· Compatible with Low Power SRAM
· Dual Chip selection support
· Package Type: 48-FBGA-6.00x7.00
· Organization: 1M x16 bit
· Power Supply Voltage: 1.7V~2.1V
· Three State Outputs
· Compatible with Low Power SRAM
· Dual Chip selection support
· Package Type: 48-FBGA-6.00x7.00
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