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The ITR9908 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IRED only. This is the normal situation. But when an object is in between, phototransistor could not receives the radiation. For additional component information, please refer to IR204/L10 and PT204-6B.
ITR9908 Maximum Ratings
Parameter
Symbol
Rating
Unit
Input
Power Dissipation
PD
75
mW
Reverse Voltage
VR
5
V
Forward Current
IF
60
mA
Peak Forward Current(*1)
IFP
1
A
Output
Collect Power Dissipation
Pc
100
mW
Collect Current
Ic
20
mA
Collector-Emitter Voltage
VCE
30
V
Emitter-Collector Voltage
VEC
5
V
Operating Temperature
Topr
-25~+85
Storage Temperature
Tstg
-25~+85
Soldering Temperature(*2)
Tsol
260
ITR9908 Features
• Fast response time • High analytic • Cut-off visible wavelength p=840nm • High sensitivity
ITR9908 Typical Application
• Copier • Scanner • Non-contact Switching • For Direct PC Board