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The ITR20001/T consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IR only . This is the normal situation. But when an reflecting object close to ITR ,phototransistor receives the reflecting radiation .For additional component information,please refer to IR2424-3C and PT2424-6B.
ITR20001/T Maximum Ratings
Parameter
Symbol
Rating
Unit
Input
Power Dissipation at(or below) 25 Free Air Temperature
Pd
75
Reverse Voltage
VR
5
Forward current
IF
50
mA
Peak Forward Current (*1) Pulse width 100s, Duty cycle=1%
IFP
1
mW
Output
Collector Power Dissipation
PC
75
V
Collector Current
IC
20
V
Collector-Emitter Voltage
BVCEO
30
mA
Emitter-Collector Voltage
BVECO
5
mW
Operating temperature
Topr
-25~+85
Storage temperature
Tstg
-40~+85
Lead Soldering Temperature (*2) (1/16 inch form body for 5 seconds)
Tsol
260
(*1) tw=100 sec. , T=10 msec. (*2) t=5 Sec
ITR20001/T Features
`Fast response time `High analytic `High sensitivity `Cut-off visible wavelength P=940nm `Pb Free `This product itself will remain within RoHS compliant version.
ITR20001/T Typical Application
·Mouse Copier ·Switch Scanner ·Floppy disk driver ·Non-contact Switching ·For Direct Board