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The IS93C46A is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left unconnected, x16 is selected; when it is connected to ground, x8 is selected. The IS93C46A is fully backward compatible with IS93C46.
An instruction set defines the operation of the devices, including read, write, and mode-enable functions. To protect against inadvertent data modification, all erase and write instructions are accepted only while the device is write-enabled. A selected x8 byte or x16 word can be modified with a single WRITE or ERASE instruction.
Additionally, the two instructions WRITE ALL or ERASE ALL can program the entire array. Once a device begins its self-timed program procedure, the data out pin (Dout) can indicate the READY/ BUSY status by raising chip select (CS). The selftimed write cycle includes an automatic erasebefore- write capability. The device can output any number of consecutive bytes/words using a single READ instruction.
IS93C46A Maximum Ratings
Symbol
Parameter
Value
Unit
VGND
Voltage with Respect to GND
0.3 to +6.5
V
TBIAS
Temperature Under Bias (Commercial or Industrial)
40 to +85
°C
TBIAS
Temperature Under Bias (Automotive)
40 to +125
°C
TSTG
Storage Temperature
65 to +150
°C
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IS93C46A Features
• Industry-standard Microwire Interface - Non-volatile data storage - Low voltage operation: Vcc = 2.5V to 5.5V - Full TTL compatible inputs and outputs - Auto increment for efficient data dump • User Configured Memory Organization - By 16-bit or by 8-bit • Hardware and software write protection - Defaults to write-disabled state at power-up - Software instructions for write-enable/disable • Enhanced low voltage CMOS E2PROM technology • Versatile, easy-to-use Interface - Self-timed programming cycle - Automatic erase-before-write - Programming status indicator - Word and chip erasable - Chip select enables power savings • Durable and reliable - 40-year data retention after 1M write cycles - 1 million write cycles - Unlimited read cycles - Schmitt-trigger inputs