Features: • Industry-standard Microwire Interface- Non-volatile data storage- Wide voltage operation:Vcc = 1.8V to 5.5V- Full TTL compatible inputs and outputs- Auto increment for efficient data dump• User Configured Memory Organization- By 16-bit or by 8-bit• Hardware and softwa...
IS93C46D: Features: • Industry-standard Microwire Interface- Non-volatile data storage- Wide voltage operation:Vcc = 1.8V to 5.5V- Full TTL compatible inputs and outputs- Auto increment for efficient da...
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The IS93C46D is very popular in many applications which require low-power, low-density storage. Applications using this device include industrial controls, networking, and numerous other consumer electronics.
Symbol | Parameter | Value | Unit |
VS VP |
Supply Voltage Voltage on Any Pin |
0.5 to +6.5 0.5 to Vcc + 0.5 |
V V |
TBIAS TSTG IOUT |
Temperature Under Bias Storage Temperature Output Current |
55 to +125 65 to +150 5 |
mA |
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left unconnected, x16 is selected; when it is connected to ground, x8 is selected.
An instruction set defines the operation of the devices IS93C46D, including read, write, and mode-enable functions. To protect against inadvertent data modification, all erase and write instructions are accepted only while the device is write-enabled. A selected x8 byte or x16 word can be modified with a single WRITE or ERASE instruction.
Additionally, the two instructions WRITE ALL or ERASE ALL can program the entire array. Once a device begins its self-timed program procedure, the data out pin (Dout) can indicate the READY/ BUSY status by raising chip select (CS). The selftimed write cycle includes an automatic erasebefore- write capability. The device can output any number of consecutive bytes/words using a single READ instruction.