IRFY9140M, IRFY9240, IRFY9240M Selling Leads, Datasheet
MFG:IR Package Cooled:TO-257AA D/C:05+
IRFY9140M, IRFY9240, IRFY9240M Datasheet download
Part Number: IRFY9140M
MFG: IR
Package Cooled: TO-257AA
D/C: 05+
MFG:IR Package Cooled:TO-257AA D/C:05+
IRFY9140M, IRFY9240, IRFY9240M Datasheet download
MFG: IR
Package Cooled: TO-257AA
D/C: 05+
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PDF/DataSheet Download
Datasheet: IRFY9140M
File Size: 228876 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: IRFY9240
File Size: 277489 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRFY9240M
File Size: 146709 KB
Manufacturer:
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Parameter |
Units | ||
ID @VGS @ -10V TC = 25°C |
Continuous Drain Current |
-15.8 |
A |
ID @VGS @ -10V TC = 100°C |
Continuous Drain Current |
-10 | |
IDM |
Pulsed Drain Current |
-60 | |
PD @TC = 25°C |
Max.Power Dissipation |
100 |
W |
Linear Derating Factor |
0.8 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
640 |
mJ |
IAR |
Avalanche Current |
-15.8 |
A |
EAR |
Repetitive Avalanche Energy |
10 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-5.5 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+150 |
°C |
Lead Temperature |
300(0.063in./1.6mm from case for 10 sec) | ||
Weight |
3.3 (Typical) |
g |
Parameter |
Units | ||
ID @VGS @ -10V TC = 25°C |
Continuous Drain Current |
-9.4 |
A |
ID @VGS @ -10V TC = 100°C |
Continuous Drain Current |
-6.0 | |
IDM |
Pulsed Drain Current |
-36 | |
PD @TC = 25°C |
Max.Power Dissipation |
100 |
W |
Linear Derating Factor |
0.8 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
700 |
mJ |
IAR |
Avalanche Current |
-9.4 |
A |
EAR |
Repetitive Avalanche Energy |
10 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-5.5 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+150 |
°C |
Lead Temperature |
300(0.063in./1.6mm from case for 10 sec) | ||
Weight |
3.3 (Typical) |
g |
Parameter |
Units | ||
ID @VGS @ -10V TC = 25°C |
Continuous Drain Current |
-9.4 |
A |
ID @VGS @ -10V TC = 100°C |
Continuous Drain Current |
-6.0 | |
IDM |
Pulsed Drain Current |
-36 | |
PD @TC = 25°C |
Max.Power Dissipation |
100 |
W |
Linear Derating Factor |
0.8 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
700 |
mJ |
IAR |
Avalanche Current |
-9.4 |
A |
EAR |
Repetitive Avalanche Energy |
10 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-5.5 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+150 |
°C |
Lead Temperature |
300(0.063in./1.6mm from case for 10 sec) | ||
Weight |
3.3 (Typical) |
g |