IRF054

Features: ·Repetitive Avalanche Ratings·Dynamic dv/dt Rating·Hermetically Sealed·Simple Drive Requirements·Ease of ParallelingSpecifications Parameter Max. Units ID @ VGS =0V TC =25 Continuous Drain Current 45 A ID @ VGS =0V TC =100 Continuous Drain Current 31 IDM Pulsed Dr...

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IRF054 Picture
SeekIC No. : 004376345 Detail

IRF054: Features: ·Repetitive Avalanche Ratings·Dynamic dv/dt Rating·Hermetically Sealed·Simple Drive Requirements·Ease of ParallelingSpecifications Parameter Max. Units ID @ VGS =0V TC =25 Con...

floor Price/Ceiling Price

Part Number:
IRF054
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Repetitive Avalanche Ratings
·Dynamic dv/dt Rating
·Hermetically Sealed
·Simple Drive Requirements
·Ease of Paralleling



Specifications

  Parameter Max. Units
ID @ VGS =0V TC =25 Continuous Drain Current 45 A
ID @ VGS =0V TC =100 Continuous Drain Current 31
IDM Pulsed Drain Current 220
PD @ TC =100 Max. Power Dissipation 150 W
  Linear Derating Factor 1.2 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 480 mJ
IAR Avalanche Current - A
EAR Repetitive Avalanche Energy - mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to + 150
  Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
  Weight 11.5(typical) g



Description

The HEXFET technology of the IRF054 is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest '' State of the Art!± design achieves: very low on-state resi tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability.

The HEXFET transistors of the IRF054 also feature all of the well estab-lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.




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