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IRFS333, IRFS33N15D, IRFS33N15DPBF

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Info of IRFS333
Info of IRFS33N15D
Info of IRFS33N15DPBF

IRFS333, IRFS33N15D, IRFS33N15DPBF Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:06+

IRFS333, IRFS33N15D, IRFS33N15DPBF Datasheet download

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Part Number: IRFS33N15DPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-3P

D/C: 06+

Description: MOSFET N-CH 150V 33A D2PAK

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IRFS33N15DPBF Parameters

Technical/Catalog Information	IRFS33N15DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	56 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	2020pF @ 25V
Power - Max	3.8W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	90nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFS33N15DPBF IRFS33N15DPBF

IRFS33N15DPBF Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25	Continuous Drain Current, V_GS @ 10V	33	A
I_D @ T_C = 100	Continuous Drain Current, V_GS @ 10V	24
I_DM	Pulsed Drain Current	130
P_D @T_A = 25	Power Dissipation	3.8	W
P_D @T_C = 25	Power Dissipation	170	W
	Linear Derating Factor	1.1	W/
V_GS	Gate-to-Source Voltage	± 30	V
d_v/dt	Peak Diode Recovery d_v/dt	4.4	V/ns
T_J	Operating Junction and	-55 to + 175
T_STG	Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

IRFS33N15DPBF Features

· Low Gate-to-Drain Charge to Reduce Switching Losses
· Fully Characterized Capacitance Including Effective C_OSS to Simplify Design,
(See App. Note AN1001)
· Fully Characterized Avalanche Voltage and Current

IRFS33N15DPBF Typical Application

·High frequency DC-DC converters
·Lead-Free

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