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IRFP064N, IRFP064NPBF, IRFP064NPBF BID 5-7 DAYS 32450 IR 2008+ -

Table of contents:
Info of IRFP064N
Info of IRFP064NPBF
Info of IRFP064NPBF BID 5-7 DAYS 32450 IR 2008+ -

IRFP064N, IRFP064NPBF, IRFP064NPBF BID 5-7 DAYS 32450 IR 2008+ - Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:08+/09+

IRFP064N, IRFP064NPBF, IRFP064NPBF BID 5-7 DAYS 32450 IR 2008+ - Datasheet download

Five Points

Part Number: IRFP064N

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-3P

D/C: 08+/09+

Description: MOSFET N-CH 55V 110A TO-247AC

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IRFP064N Parameters

Technical/Catalog Information	IRFP064N
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	110A
Rds On (Max) @ Id, Vgs	8 mOhm @ 59A, 10V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	200W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFP064N IRFP064N

IRFP064N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP064N Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	110	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	80
I_DM	Pulsed Drain Current	390
P_D @T_C= 25°C	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/°C
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	480	mJ
I_AR	Avalanche Current	59	A
E_AR	Repetitive Avalanche Energy	20	mJ
d_v/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

IRFP064N Features

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

IRFP064NPBF Parameters

Technical/Catalog Information	IRFP064NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	110A
Rds On (Max) @ Id, Vgs	8 mOhm @ 59A, 10V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	200W
Packaging	Bag
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFP064NPBF IRFP064NPBF

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