IRFIZ34A, IRFIZ34E, IRFIZ34G Selling Leads, Datasheet
MFG:IR Package Cooled:TO-220 D/C:06+
IRFIZ34A, IRFIZ34E, IRFIZ34G Datasheet download
Part Number: IRFIZ34A
MFG: IR
Package Cooled: TO-220
D/C: 06+
IRFIZ34A, IRFIZ34E, IRFIZ34G
- Table of contents:
Info of IRFIZ34A
Info of IRFIZ34E
Info of IRFIZ34G
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About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRFIZ34E
PDF/DataSheet Download
Datasheet: IRFIZ34E
File Size: 117339 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRFIZ34G
PDF/DataSheet Download
Datasheet: IRFIZ34G
File Size: 291973 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFIZ34E General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
IRFIZ34E Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 21 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 15 | |
| IDM | Pulsed Drain Current | 100 | |
| PD @TC = 25°C | Power Dissipation | 37 | W |
| Linear Derating Factor | 0.24 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 110 | mJ |
| IAR | Avalanche Current | 16 | A |
| EAR | Repetitive Avalanche Energy | 3.7 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
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