IRFI730B, IRFI744, IRFI7N50A Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
IRFI730B, IRFI744, IRFI7N50A Datasheet download
Part Number: IRFI730B
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
IRFI730B, IRFI744, IRFI7N50A
- Table of contents:
Info of IRFI730B
Info of IRFI744
Info of IRFI7N50A
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About IRFI730B
PDF/DataSheet Download
Datasheet: IRFI730B
File Size: 697888 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About IRFI744G
PDF/DataSheet Download
Datasheet: IRFI744G
File Size: 267446 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFI730B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
IRFI730B Maximum Ratings
| Symbol | Parameter | IRFW730B / IRFI730B | Unit | |
|
VDSS |
Drain-Source Voltage |
400 | V | |
|
ID |
Drain Current - Continuous (TC = 25°C) |
5.5 |
A | |
|
3.5 |
A | |||
| IDM |
Drain Current - Pulsed (Note 1) |
22 | A | |
| VGSS | Gate-Source Voltage | ± 30 | V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) | 330 | mJ | |
|
IAR |
Avalanche Current (Note 1) |
5.5 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
4.0 |
mJ | |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) * |
|
W | |
|
Power Dissipation (TC = 25°C) |
73 |
W | ||
|
0.58 |
W/ | |||
|
TJ, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
||
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
||
IRFI730B Features
• 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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