IRFI640B, IRFI640G-033, IRFI640NPBF Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
IRFI640B, IRFI640G-033, IRFI640NPBF Datasheet download
Part Number: IRFI640B
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
IRFI640B, IRFI640G-033, IRFI640NPBF
- Table of contents:
Info of IRFI640B
Info of IRFI640G-033
Info of IRFI640NPBF
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About IRFI640B
PDF/DataSheet Download
Datasheet: IRFI640B
File Size: 720742 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFI640B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
IRFI640B Maximum Ratings
| Symbol | Parameter | IRFW640B / IRFI640B | Unit | |
|
VDSS |
Drain-Source Voltage |
200 | V | |
|
ID |
Drain Current - Continuous (TC = 25°C) |
18 |
A | |
|
11.4 |
A | |||
| TDM |
Drain Current - Pulsed (Note 1) |
72 | A | |
| VGSS | Gate-Source Voltage | ± 30 | V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) | 250 | mJ | |
|
IAR |
Avalanche Current (Note 1) |
18 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
13.9 |
mJ | |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) * |
|
W | |
|
Power Dissipation (TC = 25°C) |
139 |
W | ||
|
1.11 |
W/ | |||
|
TJ, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
||
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
||
IRFI640B Features
• 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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