IRFD1Z1, IRFD1Z2, IRFD20 Selling Leads, Datasheet
MFG:IR Package Cooled:06+ D/C:2500/REEL
IRFD1Z1, IRFD1Z2, IRFD20 Datasheet download
Part Number: IRFD1Z1
MFG: IR
Package Cooled: 06+
D/C: 2500/REEL
IRFD1Z1, IRFD1Z2, IRFD20
- Table of contents:
Info of IRFD1Z1
Info of IRFD1Z2
Info of IRFD20
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About IRFD1Z1
PDF/DataSheet Download
Datasheet: IRFD1Z1
File Size: 59235 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About IRFD1Z2
PDF/DataSheet Download
Datasheet: IRFD1Z2
File Size: 59235 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFD1Z1 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA17451.
IRFD1Z1 Maximum Ratings
| IRFD1Z0 | IRFD1Z1 | IRFD1Z2 | IRFD1Z3 | UNITS | ||
| Drain to Source (Note 1). | VDS | 100 | 60 | 100 | 60 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 100 | 60 | 100 | 60 | V |
| Continuous Drain Current. | ID | 0.5 | 0.5 | 0.4 | 0.4 | A |
| Pulsed Drain Current | IDM | 4.0 | 4.0 | 3.2 | 3.2 | A |
| Maximum Power Dissipation | PD | 1.0 | 1.0 | 1.0 | 1.0 | W |
| Linear Derating Factor (See Figure 1) | 0.008 | 0.008 | 0.008 | 0.008 | W/oC | |
| Operating and Storage Temperature | TJ,TSTG | -55 to 150 | -55 to 150 | -55 to150 | -55 to150 | oC |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s |
TL | 300 | 300 | 300 | 300 | oC |
| Package Body for 10s, See Techbrief 334 | Tpkg | 260 | 260 | 260 | 260 | oC |
IRFD1Z1 Features
• 0.4A and 0.5A, 60V and 100V
• rDS(ON) = 2.4W and 3.2W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
• rDS(ON) = 2.4W and 3.2W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
IRFD1Z2 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA17451.
IRFD1Z2 Maximum Ratings
| IRFD1Z0 | IRFD1Z1 | IRFD1Z2 | IRFD1Z3 | UNITS | ||
| Drain to Source (Note 1). | VDS | 100 | 60 | 100 | 60 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 100 | 60 | 100 | 60 | V |
| Continuous Drain Current. | ID | 0.5 | 0.5 | 0.4 | 0.4 | A |
| Pulsed Drain Current | IDM | 4.0 | 4.0 | 3.2 | 3.2 | A |
| Maximum Power Dissipation | PD | 1.0 | 1.0 | 1.0 | 1.0 | W |
| Linear Derating Factor (See Figure 1) | 0.008 | 0.008 | 0.008 | 0.008 | W/oC | |
| Operating and Storage Temperature | TJ,TSTG | -55 to 150 | -55 to 150 | -55 to150 | -55 to150 | oC |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s |
TL | 300 | 300 | 300 | 300 | oC |
| Package Body for 10s, See Techbrief 334 | Tpkg | 260 | 260 | 260 | 260 | oC |
IRFD1Z2 Features
• 0.4A and 0.5A, 60V and 100V
• rDS(ON) = 2.4W and 3.2W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
• rDS(ON) = 2.4W and 3.2W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
