IRFBC40R, IRFBC40S, IRFBC40SPBF Selling Leads, Datasheet
MFG:IR Package Cooled:2000 D/C:07+
IRFBC40R, IRFBC40S, IRFBC40SPBF Datasheet download
Part Number: IRFBC40R
MFG: IR
Package Cooled: 2000
D/C: 07+
IRFBC40R, IRFBC40S, IRFBC40SPBF
- Table of contents:
Info of IRFBC40R
Info of IRFBC40S
Info of IRFBC40SPBF
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About IRFBC40R
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Datasheet: IRFBC40R
File Size: 47896 KB
Manufacturer:
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About IRFBC40S
PDF/DataSheet Download
Datasheet: IRFBC40S
File Size: 359078 KB
Manufacturer: IRF [International Rectifier]
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About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFBC40S General Description
Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2Pak is a surface mount power package capable of the accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBC40L) is available for low-profile applications.
The D2Pak is a surface mount power package capable of the accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBC40L) is available for low-profile applications.
IRFBC40S Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 6.2 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 3.9 | |
| IDM | Pulsed Drain Current | 25 | |
| PD @TA = 25°C | Power Dissipation | 3.1 | W |
| PD @TC = 25°C | Power Dissipation | 130 | W |
| Linear Derating Factor | 1.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 570 | mJ |
| IAR | Avalanche Current | 6.2 | A |
| EAR | Repetitive Avalanche Energy | 13 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRFBC40S Features
Surface Mount (IRFBC40S)
Low-profile through-hole (IRFBC40L)
Available in Tape & Reel (IRFBC40S)
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Low-profile through-hole (IRFBC40L)
Available in Tape & Reel (IRFBC40S)
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
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