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IRF9540, IRF9540L, IRF9540N

Table of contents:
Info of IRF9540
Info of IRF9540L
Info of IRF9540N

IRF9540, IRF9540L, IRF9540N Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-220-3 D/C:05+

IRF9540, IRF9540L, IRF9540N Datasheet download

Five Points

Part Number: IRF9540N

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-220-3

D/C: 05+

Description: MOSFET P-CH 100V 23A TO-220AB

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IRF9540 General Description

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly Developmental Type TA17521.

IRF9540 Maximum Ratings

	IRF9540, RF1S9540SM	UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . V_DS	-100	V
Drain to Gate Voltage (R_GS = 20k) (Note 1) . .. .. . . .V_DGR	-100	V
Continuous Drain Current . . . . . . . . . . I_D	-19	A
T_C = 100 . . . . . . . . . . . . . . . . . . I_D	-12	A
Pulsed Drain Current (Note 3) . . . . . . . . . I_DM	-76	A
Gate to Source Voltage . . . . . . .. . . . . . V_GS	±20	V
Maximum Power Dissipation (Figure 1) . . . . . . . . P_D	150	W
Linear Derating Factor (Figure 1) . . . . . . . . . . .	1	W/
Single Pulse Avalanche Energy Rating (Note 4). . .. . E_AS	960	mJ
Operating and Storage Temperature . . . . . . . . TJ, T_STG	-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .T_L	300
Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg	260

IRF9540 Features

• 19A, 100V
• rDS(ON) = 0.200W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

IRF9540 Connection Diagram

IRF9540N Parameters

Technical/Catalog Information	IRF9540N
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	117 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	140W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	97nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF9540N IRF9540N

IRF9540N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF9540N Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, VGS @ -10V	-23	A
I_D@ T_C = 100°C	Continuous Drain Current, VGS @ -10V	-16
I_DM	Pulsed Drain Current	-76
P_D @T_C = 25°C	Power Dissipation	140	W
	Linear Derating Factor	0.91	W/
V_GS	Gate-to-Source Voltage	± 20	V
E_AS	Single Pulse Avalanche Energy	430	mJ
I_AR	Avalanche Current	-11	A
E_AR	Repetitive Avalanche Energy	14	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

IRF9540N Features

·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·P-Channel
·Fully Avalanche Rated

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