IRF9231, IRF9232, IRF9233 Selling Leads, Datasheet
MFG:IR D/C:05+
IRF9231, IRF9232, IRF9233
- Table of contents:
Info of IRF9231
Info of IRF9232
Info of IRF9233
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About IRF9231
PDF/DataSheet Download
Datasheet: IRF9231
File Size: 74371 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About IRF9232
PDF/DataSheet Download
Datasheet: IRF9232
File Size: 74371 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About IRF9233
PDF/DataSheet Download
Datasheet: IRF9233
File Size: 74371 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
IRF9231 General Description
These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly Developmental type TA17512.
Formerly Developmental type TA17512.
IRF9231 Maximum Ratings
| IRF9230 | IRF9231 | IRF9232 | IRF9233 | UNITS | |
| Drain to Source Breakdown Voltage (Note 1) . . . . . VDS | -200 | -150 | -200 | -150 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. .. . . .VDGR | -200 | -150 | -200 | -150 | V |
| Continuous Drain Current . . . . . . . . . . ID |
-6.5 | -6.5 | -5.5 | -3.5 | A |
| TC = 100 . . . . . . . . . . . . . . . . . . ID |
-4.0 | -4.0 | -3.5 |
-3.5 | A |
| Pulsed Drain Current (Note 3) . . . . . . . . . IDM | -26 | -26 | -22 | -22 | A |
| Gate to Source Voltage . . . . . . .. . . . . . VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation (Figure 1) . . . . . . . . PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor . . . . . . . . . . . | 0.6 | 0.6 | 0.6 | 0.6 | W/ |
| Single Pulse Avalanche Energy Rating (Note 4). . .. . EAS | 500 | 500 | 500 | 500 | mJ |
| Operating and Storage Temperature . . . . . . . . TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL | 300 | 300 | 300 | 300 | |
| Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg | 260 | 260 | 260 | 260 |
IRF9231 Features
• -5.5A and -6.5A, -150V and -200V
• rDS(ON) = 0.8W and 1.2W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.8W and 1.2W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
IRF9232 General Description
These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly Developmental type TA17512.
Formerly Developmental type TA17512.
IRF9232 Maximum Ratings
| IRF9230 | IRF9231 | IRF9232 | IRF9233 | UNITS | |
| Drain to Source Breakdown Voltage (Note 1) . . . . . VDS | -200 | -150 | -200 | -150 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. .. . . .VDGR | -200 | -150 | -200 | -150 | V |
| Continuous Drain Current . . . . . . . . . . ID |
-6.5 | -6.5 | -5.5 | -3.5 | A |
| TC = 100 . . . . . . . . . . . . . . . . . . ID |
-4.0 | -4.0 | -3.5 |
-3.5 | A |
| Pulsed Drain Current (Note 3) . . . . . . . . . IDM | -26 | -26 | -22 | -22 | A |
| Gate to Source Voltage . . . . . . .. . . . . . VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation (Figure 1) . . . . . . . . PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor . . . . . . . . . . . | 0.6 | 0.6 | 0.6 | 0.6 | W/ |
| Single Pulse Avalanche Energy Rating (Note 4). . .. . EAS | 500 | 500 | 500 | 500 | mJ |
| Operating and Storage Temperature . . . . . . . . TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL | 300 | 300 | 300 | 300 | |
| Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg | 260 | 260 | 260 | 260 |
IRF9232 Features
• -5.5A and -6.5A, -150V and -200V
• rDS(ON) = 0.8W and 1.2W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.8W and 1.2W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
IRF9233 General Description
These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly Developmental type TA17512.
Formerly Developmental type TA17512.
IRF9233 Maximum Ratings
| IRF9230 | IRF9231 | IRF9232 | IRF9233 | UNITS | |
| Drain to Source Breakdown Voltage (Note 1) . . . . . VDS | -200 | -150 | -200 | -150 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. .. . . .VDGR | -200 | -150 | -200 | -150 | V |
| Continuous Drain Current . . . . . . . . . . ID |
-6.5 | -6.5 | -5.5 | -3.5 | A |
| TC = 100 . . . . . . . . . . . . . . . . . . ID |
-4.0 | -4.0 | -3.5 |
-3.5 | A |
| Pulsed Drain Current (Note 3) . . . . . . . . . IDM | -26 | -26 | -22 | -22 | A |
| Gate to Source Voltage . . . . . . .. . . . . . VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation (Figure 1) . . . . . . . . PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor . . . . . . . . . . . | 0.6 | 0.6 | 0.6 | 0.6 | W/ |
| Single Pulse Avalanche Energy Rating (Note 4). . .. . EAS | 500 | 500 | 500 | 500 | mJ |
| Operating and Storage Temperature . . . . . . . . TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL | 300 | 300 | 300 | 300 | |
| Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg | 260 | 260 | 260 | 260 |
IRF9233 Features
• -5.5A and -6.5A, -150V and -200V
• rDS(ON) = 0.8W and 1.2W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.8W and 1.2W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
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