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IRF7464PBF, IRF7465TRPBF BID 5-7 DAYS 48000 IR 2008+ -, IRF7465TRPBF.

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Info of IRF7464PBF
Info of IRF7465TRPBF BID 5-7 DAYS 48000 IR 2008+ -
Info of IRF7465TRPBF.

IRF7464PBF, IRF7465TRPBF BID 5-7 DAYS 48000 IR 2008+ -, IRF7465TRPBF. Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:09+

IRF7464PBF, IRF7465TRPBF BID 5-7 DAYS 48000 IR 2008+ -, IRF7465TRPBF. Datasheet download

Five Points

Part Number: IRF7464PBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: SOP-8

D/C: 09+

Description: MOSFET N-CH 200V 1.2A 8-SOIC

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IRF7464PBF Parameters

Technical/Catalog Information	IRF7464PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	1.2A
Rds On (Max) @ Id, Vgs	730 mOhm @ 720mA, 10V
Input Capacitance (Ciss) @ Vds	280pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7464PBF IRF7464PBF

IRF7464PBF Maximum Ratings

	Parameter	Max.	Units
I_D@T_A=25	Continuous Drain Current,V_GS @ 10V	1.2	A
I_D@T_A=70	Continuous Drain Current,V_GS @ 10V	1.0
I_DM	Pulsed Drain Current	10
P_D@T_A=25	CPower Dissipatio	2.5	W
	Linear Derating Factor	0.02	W/
V_GS	Gate-to-Source Voltage	30	V
dv/dt	Peak Diode Recovery dv/dt	6.8	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

IRF7464PBF Typical Application

· High frequency DC-DC converters
· Lead-Free

IRF7464PBF Connection Diagram

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