MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:D2PAK D/C:01
IRF737LCS, IRF7380PBF_5, IRF7380QPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: D2PAK
D/C: 01
Description: MOSFET N-CH 80V 8-SOIC
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF7380QPBF
File Size: 229366 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRF7380QPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Rds On (Max) @ Id, Vgs | 73 mOhm @ 2.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 25V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7380QPBF IRF7380QPBF |
Specifically designed for Automotive applications. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
| Parameter | Max. | Units | |
| VDS | Drain-to-Source Voltage | 80 | V |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V | 3.6 | A |
| ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V | 2.9 | A |
| IDM | Pulsed Drain Current � | 29 | A |
| PD @TA = 25°C | Maximum Power Dissipation | 2.0 | W |
| Linear Derating Factor | 0.02 | W/°C | |
| dv/dt | Peak Diode Recovery dv/dt | 2.3 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
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