IRF6644, IRF6644MDF2, IRF6644TR Selling Leads, Datasheet
MFG:IOR Package Cooled:DIRECTFET D/C:2006
IRF6644, IRF6644MDF2, IRF6644TR Datasheet download
Part Number: IRF6644
MFG: IOR
Package Cooled: DIRECTFET
D/C: 2006
MFG:IOR Package Cooled:DIRECTFET D/C:2006
IRF6644, IRF6644MDF2, IRF6644TR Datasheet download
MFG: IOR
Package Cooled: DIRECTFET
D/C: 2006
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PDF/DataSheet Download
Datasheet: IRF6644
File Size: 253443 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Parameter | Max. | Units | |
ID @ TA = 25°C | Continuous Drain Current, VGS @ -10V | 10.3 | A |
ID @ TA = 70°C | Continuous Drain Current, VGS @ -10V | 8.3 | A |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V | 60 | A |
IDM | Pulsed Drain Current | 60 | A |
EAS | Single Pulse Avalanche Energy | 82 | A |
IAR | Avalanche Current | 220 | mJ |
VDS | Drain- Source Voltage | 100 | V |
VGS | Gate-to-Source Voltage | ± 20 | V |