IRF5NJ5305, IRF5NJ540, IRF5NJ6215 Selling Leads, Datasheet
MFG:IR Package Cooled:SMD-0.5 D/C:00+
IRF5NJ5305, IRF5NJ540, IRF5NJ6215 Datasheet download
Part Number: IRF5NJ5305
MFG: IR
Package Cooled: SMD-0.5
D/C: 00+
IRF5NJ5305, IRF5NJ540, IRF5NJ6215
- Table of contents:
Info of IRF5NJ5305
Info of IRF5NJ540
Info of IRF5NJ6215
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About IRF5NJ5305
PDF/DataSheet Download
Datasheet: IRF5NJ5305
File Size: 121851 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF5NJ540
PDF/DataSheet Download
Datasheet: IRF5NJ540
File Size: 118225 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF5NJ6215
PDF/DataSheet Download
Datasheet: IRF5NJ6215
File Size: 119388 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRF5NJ5305 General Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
IRF5NJ5305 Maximum Ratings
| Parameter |
Units | ||
| ID @ VGS = -10V,TC = 25 | Continuous Drain Current |
-22* |
A |
| ID @ VGS = -10V,TC = 100 | Continuous Drain Current |
-16 | |
| IDM | Pulsed Drain Current |
-88 | |
| PD @TC = 25 | Max. Power Dissipation |
75 |
W |
| Linear Derating Factor0 |
0.6 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
160 |
mJ |
| IAR | Avalanche Current |
-16 |
A |
| EAR | Repetitive Avalanche Energy |
7.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
2.8 |
V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to + 150 |
|
| Lead Temperature |
300 ( for 5s) | ||
| Weight |
1.0(Typical) |
g |
IRF5NJ5305 Features
· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
IRF5NJ540 General Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
IRF5NJ540 Maximum Ratings
| Parameter |
Units | ||
| ID @ VGS = 10V,TC = 25 | Continuous Drain Current |
22* |
A |
| ID @ VGS = 10V,TC = 100 | Continuous Drain Current |
16 | |
| IDM | Pulsed Drain Current |
88 | |
| PD @TC = 25 | Max. Power Dissipation |
75 |
W |
| Linear Derating Factor |
0.60 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
200 |
mJ |
| IAR | Avalanche Current |
16 |
A |
| EAR | Repetitive Avalanche Energy |
7.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
4.1 |
V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to + 150 |
|
| Lead Temperature |
300 ( for 5s) | ||
| Weight |
10 |
g |
IRF5NJ540 Features
· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
IRF5NJ6215 General Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
IRF5NJ6215 Maximum Ratings
| Parameter |
Units | ||
| ID @ VGS = -10V,TC = 25 | Continuous Drain Current |
-11 |
A |
| ID @ VGS = -10V,TC = 100 | Continuous Drain Current |
-7.2 | |
| IDM | Pulsed Drain Current |
-44 | |
| PD @TC = 25 | Max. Power Dissipation |
75 |
W |
| Linear Derating Factor0 |
0.6 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
130 |
mJ |
| IAR | Avalanche Current |
-11 |
A |
| EAR | Repetitive Avalanche Energy |
7.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
10 |
V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to + 150 |
|
| Lead Temperature |
300 ( for 5s) | ||
| Weight |
1.0 (Typical) |
g |
IRF5NJ6215 Features
· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight
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