IRF5G49, IRF5N3205, IRF5N9540 Selling Leads, Datasheet
MFG:IR Package Cooled:. D/C:06+
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IRF5G49, IRF5N3205, IRF5N9540 Datasheet download
Part Number: IRF5G49
MFG: IR
Package Cooled: .
D/C: 06+
MFG:IR Package Cooled:. D/C:06+
IRF5G49, IRF5N3205, IRF5N9540 Datasheet download
MFG: IR
Package Cooled: .
D/C: 06+
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF5N3205
File Size: 121625 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
Parameter |
Units | ||
ID @ VGS = 10V,TC = 25 | Continuous Drain Current |
55* |
A |
ID @ VGS = 10V,TC = 100 | Continuous Drain Current |
55* | |
IDM | Pulsed Drain Current |
220 | |
PD @TC = 25 | Max. Power Dissipation |
125 |
W |
Linear Derating Factor |
1.0 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
EAS | Single Pulse Avalanche Energy |
140 |
mJ |
IAR | Avalanche Current |
55 |
A |
EAR | Repetitive Avalanche Energy |
12.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
2.7 |
V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to + 150 |
|
Lead Temperature |
300 ( for 5s) | ||
Weight |
2.6 (Typical) |
g |