MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
IRF2907ZS-7PPBF, IRF2907ZSTRLPBF, IRF2910S Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 75V 75A D2PAK
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PDF/DataSheet Download
Datasheet: IRF2907ZS-7PPBF
File Size: 680086 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRF2907ZS-7PPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 110A, 10V |
| Input Capacitance (Ciss) @ Vds | 7580pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 260nC @ 10V |
| Package / Case | D²Pak, TO-263 (7 leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF2907ZS 7PPBF IRF2907ZS7PPBF |
Specifically designed for high current, high reliabil- ity applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and ad- vanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175!a junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR'ing, Automotive and low voltage Motor Drive Applications.
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V(Silicon Limited) | 180 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V(See Fig. 9) | 120 | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V(Package Limited) |
160 | |
| IDM | Pulsed Drain Current | 700 | |
| ID @ TC =100 | Power Dissipation | 300 | W |
| Linear Derating Factor | 2.0 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) |
160 | mJ |
| EAS (tested) |
Single Pulse Avalanche Energy Tested Value |
410 | |
| IAR | Avalanche Current | See Fig.12a,12b,15,16 | |
| EAR | Repetitive Avalanche Energy | ||
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting Torque, 6-32 or screw | 10 lbf.in (1.1 N.m) |
| Technical/Catalog Information | IRF2907ZSTRLPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 7500pF @ 25V |
| Power - Max | 300W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 270nC @ 10V |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF2907ZSTRLPBF IRF2907ZSTRLPBF |
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