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IDTQS3125S1G, IDTQS3126, IDTQS3126QG

Table of contents:
Info of IDTQS3125S1G
Info of IDTQS3126
Info of IDTQS3126QG

IDTQS3125S1G, IDTQS3126, IDTQS3126QG Selling Leads, Datasheet

MFG:IDT, Integrated Device Technology Inc Category:Integrated Circuits (ICs) Package Cooled:SOIC14 D/C:2006

IDTQS3125S1G, IDTQS3126, IDTQS3126QG Datasheet download

Five Points

Part Number: IDTQS3126QG

Category: Integrated Circuits (ICs)

MFG: IDT, Integrated Device Technology Inc

Package Cooled: SOIC14

D/C: 2006

Description: IC BUS SWITCH QUAD CMOS 16-QSOP

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IDTQS3125S1G Parameters

Technical/Catalog Information	IDTQS3125S1G
Vendor	IDT, Integrated Device Technology Inc
Category	Integrated Circuits (ICs)
Circuit	1 x 4:1
Independent Circuits	1
Mounting Type	Surface Mount
Current - Output High, Low	-
Package / Case	14-SOIC
Packaging	Tube
Type	Bus Switch
Voltage Supply Source	Single Supply
Operating Temperature	-40°C ~ 85°C
Voltage - Supply	2.3 V ~ 3.6 V
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IDTQS3125S1G IDTQS3125S1G 800 1712 5 ND 80017125ND 800-1712-5

IDTQS3126 General Description

The QS3126 provides a set of four high-speed CMOS switches connect-ing inputs to outputs. The low ON resistance of the QS3126 allows inputs to be connected to outputs without propagation delay and without generating additional ground bounce noise. Individual active high enables (OE) are used to turn the switches on. The QS3126 is ideal for signal and control switching since the device adds no noise, ground bounce, propagation delay, or significant power consumption to the system.

QuickSwitch devices provide an order of magnitude faster speed than conventional logic devices.
The QS3126 is characterized for operation at -40°C to +85°C.

IDTQS3126 Maximum Ratings

Symbol	Description	Max	Unit
VTERM⁽²⁾	Supply Voltage to Ground	0.5 to +7	V
VTERM⁽³⁾	DC Switch Voltage V_S	0.5 to +7	V
VTERM⁽³⁾	DC Input Voltage V_IN	0.5 to +7	V
VAC	AC Input Voltage (pulse width 20ns)	3	V
IOUT	DC Output Current	120	mA
PMAX	Maximum Power Dissipation (TA = 85°C)	0.5	W
TSTG	Storage Temperature	65 to +150	°C

IDTQS3126 Features

* Enhanced N channel FET with no inherent diode to Vcc
* Bidirectional switches connect inputs to outputs
* Pin compatible with the 74'126 function
* Zero propagation delay, zero ground bounce
* Undershoot clamp diodes on all switch and control inputs
* Available in QSOP and SOIC packages

IDTQS3126 Typical Application

* Active high enabling
* Hot-swapping, hot-docking
* Voltage translation (5V to 3.3V)
* Power conservation
* Capacitance reduction and isolation (mass storage, work stations)
* Logic replacement (data processing)
* Clock gating
* Bus isolation

IDTQS3126 Connection Diagram

IDTQS3126QG Parameters

Technical/Catalog Information	IDTQS3126QG
Vendor	IDT, Integrated Device Technology Inc
Category	Integrated Circuits (ICs)
Circuit	1 x 4:1
Independent Circuits	1
Mounting Type	Surface Mount
Current - Output High, Low	-
Package / Case	16-QSOP (SSOP)
Packaging	Tube
Type	Bus Switch
Voltage Supply Source	Single Supply
Operating Temperature	-40°C ~ 85°C
Voltage - Supply	2.3 V ~ 3.6 V
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IDTQS3126QG IDTQS3126QG 800 1713 5 ND 80017135ND 800-1713-5

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