Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
IDT06S60C: Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
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Product : | Schottky Silicon Carbide Diodes | Peak Reverse Voltage : | 600 V |
Forward Continuous Current : | 6 A | Max Surge Current : | 49 A |
Configuration : | Single | Forward Voltage Drop : | 1.7 V |
Maximum Reverse Leakage Current : | 80 uA | Operating Temperature Range : | - 55 C to + 175 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Tube |
Parameter | Symbol | Conditions | Value | Unit |
Continuous forward current RMS forward current |
I F I F,RMS |
T C<140 f =50 Hz |
6 9 |
A |
Surge non-repetitive forward current, sine halfwave |
I F,SM | T C=25 , t p=10 ms | 49 | |
Repetitive peak forward current | I F,RM | T j=150 , T C=100 , D =0.1 |
28 | |
Non-repetitive peak forward current i2t value |
I F,max fi 2dt |
T C=25 , t p=10 s T C=25 , t p=10 ms |
210 12 |
A A2s |
Repetitive peak reverse voltage | V RRM | 600 | V | |
Diode ruggedness dv/dt Power dissipation |
dv /dt P tot |
VR = 0.480V T C=25 |
50 63 |
V/ns W |
Operating and storage temperature | T j, T stg | T C=25 |
-55 ... 175 | |
Mountig torque | M3 and M3.5 screws | 60 | Ncm |
Technical/Catalog Information | IDT06S60C |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Diode Type | Silicon Carbide |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 6A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 6A |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 80A @ 600V |
Speed | No Recovery Time > 500mA (Io) |
Mounting Type | Through Hole, Radial |
Package / Case | TO-220-2 |
Packaging | Tube |
Capacitance @ Vr, F | 280pF @ 1V, 1MHz |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IDT06S60C IDT06S60C |