Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The FCT163646 16-bit registered transceiver is built using advanced dual metal CMOS technology. These high-speed, low-power devices are organized as two independant 8-bit bus transceivers with 3-state D-type registers. The control circuitry is organized for multiplexed transmission of data between A bus and B bus either directly or from the internal storage registers. Each 8-bit transceiver/register features direction control (xDIR), over-riding Output Enable control (xOE) and Select lines (xSAB and xSBA) to select either real-time data or stored data. Separate clock inputs are provided for A and B port registers. Data on the A or B data bus, or both, can be stored in the internal registers by the low-to-high transitions at the appropriate clock pins. Flow-through organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin.
The FCT163646 has series current limiting resistors. This offers low ground bounce, minimal undershoot, and controlled output fall timesreducing the need for external series terminating resistors.
IDT74FCT163646A Maximum Ratings
Symbol
Description
Max
Unit
VTERM(2)
Terminal Voltage with Respect to GND
0.5 to +4.6
V
VTERM(3)
Terminal Voltage with Respect to GND
0.5 to +7
V
VTERM(4)
Terminal Voltage with Respect to GND
0.5 to VCC+0.5
V
TSTG
Storage Temperature
65 to +150
°C
IOUT
DC Output Current
60 to +60
mA
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Vcc terminals. 3. Input terminals. 4. Outputs and I/O terminals.
IDT74FCT163646A Features
• 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4 W typ. static) • Rail-to-rail output swing for increased noise margin • Low Ground Bounce (0.3V typ.) • Inputs (except I/O) can be driven by 3.3V or 5V components • Available in SSOP and TSSOP packages
IDT74FCT163646A Connection Diagram
IDT74FCT163646C General Description
The FCT163646 16-bit registered transceiver is built using advanced dual metal CMOS technology. These high-speed, low-power devices are organized as two independant 8-bit bus transceivers with 3-state D-type registers. The control circuitry is organized for multiplexed transmission of data between A bus and B bus either directly or from the internal storage registers. Each 8-bit transceiver/register features direction control (xDIR), over-riding Output Enable control (xOE) and Select lines (xSAB and xSBA) to select either real-time data or stored data. Separate clock inputs are provided for A and B port registers. Data on the A or B data bus, or both, can be stored in the internal registers by the low-to-high transitions at the appropriate clock pins. Flow-through organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin.
The FCT163646 has series current limiting resistors. This offers low ground bounce, minimal undershoot, and controlled output fall timesreducing the need for external series terminating resistors.
IDT74FCT163646C Maximum Ratings
Symbol
Description
Max
Unit
VTERM(2)
Terminal Voltage with Respect to GND
0.5 to +4.6
V
VTERM(3)
Terminal Voltage with Respect to GND
0.5 to +7
V
VTERM(4)
Terminal Voltage with Respect to GND
0.5 to VCC+0.5
V
TSTG
Storage Temperature
65 to +150
°C
IOUT
DC Output Current
60 to +60
mA
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Vcc terminals. 3. Input terminals. 4. Outputs and I/O terminals.
IDT74FCT163646C Features
• 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4 W typ. static) • Rail-to-rail output swing for increased noise margin • Low Ground Bounce (0.3V typ.) • Inputs (except I/O) can be driven by 3.3V or 5V components • Available in SSOP and TSSOP packages