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IDT71V3576SA, IDT71V3576YS, IDT71V3576YS150PF

Table of contents:
Info of IDT71V3576SA
Info of IDT71V3576YS
Info of IDT71V3576YS150PF

IDT71V3576SA, IDT71V3576YS, IDT71V3576YS150PF Selling Leads, Datasheet

MFG:IDT, Integrated Device Technology Inc Category:Integrated Circuits (ICs) Package Cooled:N/A D/C:09+

IDT71V3576SA, IDT71V3576YS, IDT71V3576YS150PF Picture

IDT71V3576SA, IDT71V3576YS, IDT71V3576YS150PF Datasheet download

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Part Number: IDT71V3576SA

Category: Integrated Circuits (ICs)

MFG: IDT, Integrated Device Technology Inc

Package Cooled: N/A

D/C: 09+

Description: IC SRAM 128KX36 150MHZ 100-TQFP

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IDT71V3576SA General Description

The IDT71V3576/78 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3576/78 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.

The burst mode feature offers the highest level of performance to the system designer, as the IDT71V3576/78 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will be pipelined for one cycle before it is available on the next rising clock edge. If burst mode operation is selected (ADV=LOW), the subsequent three cycles of output data will be available to the user on the next three rising clock edges. The order of these three addresses are defined by the internal burst counter and the LBO input pin.

The IDT71V3576/78 SRAMs utilize IDT's latest high-performance CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array (BGA) and a 165 fine pitch ball grid array (fBGA).

IDT71V3576SA Features

` 128K x 36, 256K x 18 memory configurations
` Supports high system speed: Commercial and Industrial: 150MHz 3.8ns clock access time 133MHz 4.2ns clock access time
`LBO input selects interleaved or linear burst mode
`Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)
` 3.3V core power supply
` Power down controlled by ZZ input
` 3.3V I/O
` Optional - Boundary Scan JTAG Interface (IEEE 1149.1 compliant)
` Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA)

IDT71V3576SA Typical Application

Symbol	Rating	Commercial & Industrial	Unit
V_TERM⁽²⁾	Terminal Voltage with Respect to GND	-0.5 to +4.6	V
V_TERM^(3,6)	Terminal Voltage with Respect to GND	-0.5 to V_DD	V
V_TERM^(4,6)	Terminal Voltage with Respect to GND	-0.5 to V_DD +0.5	V
V_TERM^(5,6)	Terminal Voltage with Respect to GND	-0.5 to V_DDQ+0.5	V
T_A⁽⁷⁾	Commercial Operating Temperature	-0 to +70
T_A⁽⁷⁾	Industrial Operating Temperature	-40 to +85
T_BIAS	Temperature Under Bias	-55 to +125
T_STG	Storage Temperature	-55 to +125
P_T	Power Dissipation	2.0	W
I_OUT	DC Output Current	50	mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have ramped up. Power supply sequencing is not necessary; however, the voltage on any input or I/O pin cannot exceed VDDQ during power supply ramp up.
7. TA is the "instant on" case temperature.

IDT71V3576SA Connection Diagram

IDT71V3576YS150PF Parameters

Technical/Catalog Information	IDT71V3576YS150PF
Vendor	IDT, Integrated Device Technology Inc
Category	Integrated Circuits (ICs)
Memory Type	SRAM - Synchronous
Memory Size	4M (128K x 36)
Speed	150MHz
Interface	Parallel
Package / Case	100-TQFP
Packaging	Tray
Voltage - Supply	3.135 V ~ 3.465 V
Operating Temperature	0°C ~ 70°C
Format - Memory	RAM
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IDT71V3576YS150PF IDT71V3576YS150PF

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