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The HSDL-4260 High Power Infrared emitter was designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 875nm.The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package.
HSDL-4260 Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Reference
Peak Forward Current
IFPK
-
500
mA
Figure 3 Duty cycle = 20% Pulse Width = 100us
Forward Current
IFDC
-
100
mA
1
Power Dissipation
PDISS
-
230
mW
Reverse Voltage
VR
4
-
V
IR=100uA
Storage Temperature
TS
-40
100
LED Junction Temperature
TJ
110
Lead Soldering Temperature
260 for 5 sec
Notes: Derate as shown in Figure 6.
HSDL-4260 Features
• High Power AlGaAs LED Technology • 875nm Wavelength • T-1¾ Package • Low Cost • Low Forward Voltage: 1.4V at 20mA • High Speed: 15ns Rise Times
HSDL-4260 Typical Application
• Industrial Infrared Equipments and applications • Portable Infrared Instruments • Consumer Electronics (Optical mouse, Infrared Remote Controllers etc) • High Speed Infrared Communications (IR LANs, IR Modems, IR Dongles etc)
HSDL-4261 Parameters
Technical/Catalog Information
HSDL-4261
Vendor
Lite-On Inc
Category
Optoelectronics
Voltage - Forward (Vf) Typ
1.4V
Current - DC Forward (If)
100mA
Wavelength
870nm
Viewing Angle
-
Radiant Intensity (Ie) Min @ If
-
Mounting Type
Through Hole
Package / Case
T 1 3/4
Orientation
Top View
Packaging
Bulk
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HSDL 4261 HSDL4261 516 1706 ND 5161706ND 516-1706
HSDL-4261 General Description
The HSDL-4261 Infrared emitter was designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 870nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package.
HSDL-4261 Maximum Ratings
Parameter
Symbol
Min.
Max
Unit
Reference
DC Forward Current
Power Dissipation
IFDC
PDISS
-
-
100
190
mA
mW
[1], Fig. 2
Reverse Voltage
Operating Temperature
VR
5
-40
-
70
V
Storage Temperature
LED Junction Temperature
TS
TJ
-40
-
100
110
Lead Soldering Temperature
-
260 for 5 sec
Notes: 1. Derate as shown in Figure 6.
HSDL-4261 Features
• Very High Power AlGaAs LED Technology • 870nm Wavelength • T-1¾ Package • Low Cost • Low Forward Voltage: 1.4V at 20mA • High Speed: 15ns Rise Times
HSDL-4261 Typical Application
• Industrial IR Equipments • IR Portable Instruments • Consumer Electronics (Optical mouse etc) • High Speed IR Communications (IR LANs, IR Modems, IR Dongles etc) • IR Audio • IR Telephones