Features: • Part Identification HSD16M64D8A-F/10L : 100MHz (CL=3) HSD16M64D8A-F/10 : 100MHz (CL=2) HSD16M64D8A-F/13 : 133MHz (CL=3) HSD16M64D8A-F/12 : 125MHz (CL=3) F means Auto & Self refresh with Low-Power (3.3V)• Burst mode operation• Auto & self refresh capability (40...
HSD16M64D8A: Features: • Part Identification HSD16M64D8A-F/10L : 100MHz (CL=3) HSD16M64D8A-F/10 : 100MHz (CL=2) HSD16M64D8A-F/13 : 133MHz (CL=3) HSD16M64D8A-F/12 : 125MHz (CL=3) F means Auto & Self ref...
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DescriptionThe HSD128M72B9K is a 128M x 72 bit Synchronous Dynamic RAM high density memory module....
PARAMETER |
SYMBOL |
RATING |
Voltage on Any Pin Relative to Vss |
VIN ,OUT |
-1V to 4.6V |
Voltage on Vcc Supply Relative to Vss |
Vcc |
-1V to 4.6V |
Power Dissipation |
PD |
8W |
Storage Temperature |
TSTG |
-55 to 150 |
Short Circuit Output Current |
IOS |
200mA |
Power Dissipation Ta = 70*1 |
PD |
0.8 |
The HSD16M64D8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists
of eight CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M64D8A is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.