HSD16M64D8B

Features: ·Part Identification HSD16M64D8B-10 : 100MHz ( CL=2) HSD16M64D8B-10L : 100MHz ( CL=3) HSD16M64D8B- 13 : 133MHz ( CL=3)·Burst mode operation·Auto & self refresh capability (4096 Cycles/64ms)·LVTTL compatible inputs and outputs·Single 3.3V ±0.3V power supply·MRS cycle with address key ...

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SeekIC No. : 004365992 Detail

HSD16M64D8B: Features: ·Part Identification HSD16M64D8B-10 : 100MHz ( CL=2) HSD16M64D8B-10L : 100MHz ( CL=3) HSD16M64D8B- 13 : 133MHz ( CL=3)·Burst mode operation·Auto & self refresh capability (4096 Cycles/...

floor Price/Ceiling Price

Part Number:
HSD16M64D8B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

·Part Identification
   HSD16M64D8B-10 : 100MHz ( CL=2)
   HSD16M64D8B-10L : 100MHz ( CL=3)
   HSD16M64D8B- 13 : 133MHz ( CL=3)
·Burst mode operation
·Auto & self refresh capability (4096 Cycles/64ms)
·LVTTL compatible inputs and outputs
·Single 3.3V ±0.3V power supply
·MRS cycle with address key programs
   - Latency (Access from column address)
   - Burst length (1, 2, 4, 8 & Full page)
   - Data scramble (Sequential & Interleave)
·JEDEC standard
· All inputs are sampled at the positive going edge of the system clock
·The used device is2Mx16Bitx4Banks SDRAM



Specifications

PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN ,OUT
-1V to 4.6V
Voltage on Vcc Supply Relative to Vss
Vcc
-1V to 4.6V
Power Dissipation
PD
8W
Storage Temperature
TSTG
-55 to 150
Short Circuit Output Current
IOS
50mA

Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.




Description

The HSD16M64D8B is a 16M x 64 bit Synchronous Dynamic RAM high density memory module.

HSD16M64D8B consists of eight CMOS 2M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.

The HSD16M64D8B is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.




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