HRF3205S, HRF3232, HRF3250 Selling Leads, Datasheet
MFG:INTERSIL Package Cooled:2007+ROHS D/C:15000
HRF3205S, HRF3232, HRF3250 Datasheet download
Part Number: HRF3205S
MFG: INTERSIL
Package Cooled: 2007+ROHS
D/C: 15000
MFG:INTERSIL Package Cooled:2007+ROHS D/C:15000
HRF3205S, HRF3232, HRF3250 Datasheet download
MFG: INTERSIL
Package Cooled: 2007+ROHS
D/C: 15000
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Datasheet: HRF3205S
File Size: 84722 KB
Manufacturer: INTERSIL [Intersil Corporation]
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PDF/DataSheet Download
Datasheet: HRF22
File Size: 31687 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HRF22
File Size: 31687 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Drain to Source Voltage (Note 1) |
VDSS |
55 |
V |
Drain to Gate Voltage (RGS = 20kW) (Note 1) |
VDGR |
55 |
V |
Gate to Source Voltage |
VGS |
±20V |
V |
Drain Current Drain Current |
ID |
100 |
A |
Drain Current Pulsed Drain Current (Note 2) |
IDM |
390 |
A |
Pulsed Avalanche Rating |
EAS |
Figure 10 |
|
Power Dissipation |
PD |
175 |
W |
Derate Above 25oC |
1.17 |
W/ | |
Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
|
Maximum Temperature for Soldering | |||
Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |