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HRF3205S

Features: • 100A, 55V (See Note)• Low On-Resistance, rDS(ON) = 0.008W• Temperature Compensating PSPICE® Model• Thermal Impedance SPICE Model• UIS Rating Curve• Related Literature- TB334, Guidelines for Soldering Surface Mount Components to PC Boards PinoutS...

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SeekIC No. : 004365538 Detail

HRF3205S: Features: • 100A, 55V (See Note)• Low On-Resistance, rDS(ON) = 0.008W• Temperature Compensating PSPICE® Model• Thermal Impedance SPICE Model• UIS Rating Curve•...

HRF3205S Data Sheet

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Part Number:
HRF3205S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 100A, 55V (See Note)
• Low On-Resistance, rDS(ON) = 0.008W
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Pinout

Connection Diagram


Specifications

Drain to Source Voltage (Note 1)
VDSS
55
V
Drain to Gate Voltage (RGS = 20kW) (Note 1)
VDGR
55
V
Gate to Source Voltage
VGS
±20V
V
Drain Current Drain Current
ID
100
A
Drain Current Pulsed Drain Current (Note 2)
IDM
390
A
Pulsed Avalanche Rating
EAS
Figure 10
Power Dissipation
PD
175
W
Derate Above 25oC
1.17
W/
Operating and Storage Temperature
TJ,TSTG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
TL
300
Package Body for 10s, See Techbrief 334
Tpkg
260



Description

HRF3205S are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.




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