HN58C65P-15, HN58C65P-20, HN58C66 Selling Leads, Datasheet
MFG:HIT Package Cooled:DIP D/C:9+
HN58C65P-15, HN58C65P-20, HN58C66 Datasheet download
Part Number: HN58C65P-15
MFG: HIT
Package Cooled: DIP
D/C: 9+
HN58C65P-15, HN58C65P-20, HN58C66
- Table of contents:
Info of HN58C65P-15
Info of HN58C65P-20
Info of HN58C66
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About HN5400
PDF/DataSheet Download
Datasheet: HN5400
File Size: 127756 KB
Manufacturer: SEMTECH [Semtech Corporation]
Download : Click here to Download
About HN5400
PDF/DataSheet Download
Datasheet: HN5400
File Size: 127756 KB
Manufacturer: SEMTECH [Semtech Corporation]
Download : Click here to Download
About HN58C66 Series
PDF/DataSheet Download
Datasheet: HN58C66 Series
File Size: 119061 KB
Manufacturer: hitachi
Download : Click here to Download
HN58C66 General Description
The Hitachi HN58C66 is a electrically erasable and programmable ROM organized as 8192-word× 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming
function to make its erase and write operations faster.
HN58C66 Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Supply voltage*1 |
VCC |
0.6 to +7.0 |
V |
| Input voltage*1 |
Vin |
0.5*2 to +7.0 |
V |
| Operating temperature range*3 |
Topr |
0 to +70 |
°C |
| Storage temperature range |
Tstg |
55 to +125 |
°C |
2. Vin min = 3.0 V for pulse width 50 ns
3. Including electrical characteristics and data retention
HN58C66 Features
· Single 5 V supply
· On chip latches: address, data, CE , OE , WE
· Automatic byte write: 10 ms max
· Automatic page write (32 bytes): 10 ms max
· High speed: Access time 250 ns max
· Low power dissipation:
20 mW/MHz typ (active)
2.0 mW typ (standby)
· Data polling, RDY/Busy
· Data protection circuit on power on/off
· Conforms to JEDEC byte-wide standard
· Reliable CMOS with MNOS cell technology
· 105 erase/write cycles (in page mode)
· 10 years data retension
· Write protection by RES pin
· On chip latches: address, data, CE , OE , WE
· Automatic byte write: 10 ms max
· Automatic page write (32 bytes): 10 ms max
· High speed: Access time 250 ns max
· Low power dissipation:
20 mW/MHz typ (active)
2.0 mW typ (standby)
· Data polling, RDY/Busy
· Data protection circuit on power on/off
· Conforms to JEDEC byte-wide standard
· Reliable CMOS with MNOS cell technology
· 105 erase/write cycles (in page mode)
· 10 years data retension
· Write protection by RES pin
HN58C66 Connection Diagram
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