HMC478SC70, HMC478ST89E, HMC478ST89ETR Selling Leads, Datasheet
MFG:HITTITE Package Cooled:SOT-89 D/C:07+
HMC478SC70, HMC478ST89E, HMC478ST89ETR Datasheet download
Part Number: HMC478SC70
MFG: HITTITE
Package Cooled: SOT-89
D/C: 07+
MFG:HITTITE Package Cooled:SOT-89 D/C:07+
HMC478SC70, HMC478ST89E, HMC478ST89ETR Datasheet download
MFG: HITTITE
Package Cooled: SOT-89
D/C: 07+
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
The HMC478SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 4 GHz. This industry standard SC70 packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +17 dBm output power. The HMC478SC70(E) offers 23 dB of gain with a +31 dBm output IP3 at 850 MHz while requiring only 62 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
Collector Bias Voltage (Vcc) | +6.0 Vdc |
Collector Bias Current (Icc) | 100 mA |
RF Input Power (RFin)(Vcc = +2.4 Vdc) | +5 dBm |
Junction Temperature | 150 |
Continuous Pdiss (T = 85 ) (derate 9 mW/ above 85 ) |
0.583 W |
Thermal Resistance (junction to lead) |
111.5 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
ESD Sensitivity (HBM) | Class 1C |