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HMC261LM1, HMC262, HMC263

Table of contents:
Info of HMC261LM1
Info of HMC262
Info of HMC263

HMC261LM1, HMC262, HMC263 Selling Leads, Datasheet

MFG:HITTITE Package Cooled:N/A D/C:N/A

HMC261LM1, HMC262, HMC263 Datasheet download

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Part Number: HMC261LM1

MFG: HITTITE

Package Cooled: N/A

D/C: N/A

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HMC261LM1 General Description

The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip performance. Utilizing a GaAs PHEMT process the device offers 13 dB gain and +14 dBm saturated output power from a bias supply of +4V @ 75 mA. The packaged amplifier enables economical PCB SMT assembly for millimeterwave point-to-point radios, LMDS, and SATCOM applications. As an alternative to chip-and-wire hybrid assemblies the HMC261LM1 eliminates the need for wirebonding, thereby providing a consistentconnection interface for the customer. All data is with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test fixture. This part replaces the HMC261CB1 by offering more bandwidth and gain.

HMC261LM1 Maximum Ratings

Supply Voltage(Vdd)	+5.5Vdc
Input Power(RFin) (Vdd = +3V)	+16dBm
Channel Temperture(Tc)	175
Thermal Resistance(jc)	90/W
Storage Temperate	-65 to +150
Operating Temperature	-55 to +85

HMC261LM1 Features

·SMT mmWAVE PACKAGE
·13 dB GAIN
·P1dB OUTPUT POWER: +12 dBm
·SINGLE POSITIVE SUPPLY : +3V to +4V
·NO GATE BIAS

HMC262 General Description

The HMC262 chip is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 15 to 24 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.75 mm 2 ) size. The chip utilizes a GaAs PHEMT process offering 25 dB gain from a single bias supply of + 3V @ 36 mA with a noise figure of 2 dB. This LNA can be used in microwave & millimeter wave point-to-point radios, VSAT, and other SATCOM applications. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). The HMC262 may be used in conjunction with HMC203, HMC258, HMC264, or HMC265 mixers to realize a microwave or millimeterwave system receiver.

HMC262 Maximum Ratings

Supply Voltage (Vdd) (Vdd = V1 = V2 = V3)	+5.5 Vdc
Input Power (RFin) (Vdd = +3V)	-5 dBm
Channel Temperature (Tc)	175 °C
Thermal Resistance (jc) (Channel Backside)	90 °C/W
Storage Temperature	-65 to +150 °C
Operating Temperature	-55 to +85 °C

HMC262 Features

EXCELLENT NOISE FIGURE : 2 dB
STABLE GAIN VS TEMPERATURE: 25 dB ±1.5 dB
SINGLE SUPPLY : +3V@ 36mA
SMALL SIZE: 1.32 mm x 2.08 mm

HMC263 General Description

The HMC263 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 24 to 36 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (3.29 mm2) size. The chip utilizes a GaAs PHEMT process offering 22 dB gain from a single bias supply of + 3V @ 58 mA with a noise fi gure of 2.0 dB. All data is with the chip in a 50 ohm test fi xture connected via 0.076 mm (3 mil) diameter ribbon bonds of minimal length 0.31 mm (<12 mils). The HMC263 may be used in conjunction with HMC259, HMC264, or HMC265 mixers to realize a millimeterwave system receiver.

HMC263 Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2)	+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)	-5 dBm
Channel Temperature	175 °C
Continuous Pdiss (T = 85 °C) (derate 7.69 mW/°C above 85 °C)	0.692 W
Thermal Resistance (channel to lead)	130 °C/W
Storage Temperature	-65 to +150 °C
Operating Temperature	-55 to +85 °C

HMC263 Features

Excellent Noise Figure: 2.0 dB
Gain: 22 dB
Single Supply : +3V @ 58 mA
Small Size: 1.33 mm x 2.48 mm

HMC263 Typical Application

The HMC263 is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT
• SATCOM

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