HIP202EIBN, HIP2030IM, HIP2060 Selling Leads, Datasheet
MFG:N/A Package Cooled:00+ D/C:SOP-16
HIP202EIBN, HIP2030IM, HIP2060 Datasheet download
Part Number: HIP202EIBN
MFG: N/A
Package Cooled: 00+
D/C: SOP-16
HIP202EIBN, HIP2030IM, HIP2060
- Table of contents:
Info of HIP202EIBN
Info of HIP2030IM
Info of HIP2060
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About HIP0045
PDF/DataSheet Download
Datasheet: HIP0045
File Size: 95776 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About HIP0045
PDF/DataSheet Download
Datasheet: HIP0045
File Size: 95776 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About HIP2060
PDF/DataSheet Download
Datasheet: HIP2060
File Size: 60515 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
HIP2060 General Description
The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.
The HIP2060 is designed to integrate two power devices in one chip thus providing board layout area and heat sink savings for applications such as Motor Controls, Uninterruptable Power Supplies, Switch Mode Power Supplies, Voice Coil Motors, and Class D Power Amplifier.
The HIP2060 is designed to integrate two power devices in one chip thus providing board layout area and heat sink savings for applications such as Motor Controls, Uninterruptable Power Supplies, Switch Mode Power Supplies, Voice Coil Motors, and Class D Power Amplifier.
HIP2060 Maximum Ratings
Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . .VDS 60 V
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISD 10 A
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 25 A
Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . IDS 10 A
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 100 mJ
Continuous Power Dissipation at TC = 25(Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . . . PD 46 W
Continuous Power Dissipation, Derate above TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.37 W/
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . qJA 60 /W
Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC -40 to 125
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -40 to 150
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . . . . . .VD1S2 60 V
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISD 10 A
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 25 A
Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . IDS 10 A
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 100 mJ
Continuous Power Dissipation at TC = 25(Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . . . PD 46 W
Continuous Power Dissipation, Derate above TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.37 W/
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . qJA 60 /W
Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC -40 to 125
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -40 to 150
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . . . . . .VD1S2 60 V
HIP2060 Features
• Two 10A Power MOS N-Channel Transistors
• Output Voltage to 60V
• rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V
• rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V
• Pulsed Current . . . . . . . . . . . . . . . .25A Each Transistor
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
• Grounded Tab Eliminates Heat Sink Isolation
• Output Voltage to 60V
• rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V
• rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V
• Pulsed Current . . . . . . . . . . . . . . . .25A Each Transistor
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
• Grounded Tab Eliminates Heat Sink Isolation
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