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GSD2004S-V-GSO8, GSD2004WS-V, GSD2004W-V

Table of contents:
Info of GSD2004S-V-GSO8
Info of GSD2004WS-V
Info of GSD2004W-V

GSD2004S-V-GSO8, GSD2004WS-V, GSD2004W-V Selling Leads, Datasheet

MFG:VISHAY Package Cooled:SOT23 D/C:2008

GSD2004S-V-GSO8, GSD2004WS-V, GSD2004W-V Picture

GSD2004S-V-GSO8, GSD2004WS-V, GSD2004W-V Datasheet download

Five Points

Part Number: GSD2004S-V-GSO8

MFG: VISHAY

Package Cooled: SOT23

D/C: 2008

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GSD2004WS-V General Description

Small Signal Switching Diode, High Voltage

GSD2004WS-V Maximum Ratings

Parameter	Test condition	Symbol	Value	Unit
Continuous reverse voltage		V_R	240	V
Peak repetitive reverse voltage		V_RRM	300	V
Forward current (continuous)		I_F	225	mA
Peak repetitive forward current		I_FRM	625	mA
Non-repetitive peak forward current	tp = 1 s	I_FSM	4.0	A
Non-repetitive peak forward current	tp = 1 s	I_FSM	1.0	A
Power dissipation		P_tot	2001)	mW

1) Device on Fiberglass Substrate, see layout on second page

GSD2004WS-V Features

• Silicon Epitaxial Planar Diode
• Fast switching diode,especially suited for applications requiring high voltage capability
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

GSD2004W-V General Description

Small Signal Switching Diode, High Voltage

GSD2004W-V Maximum Ratings

Parameter	Test condition	Symbol	Value	Unit
Continuous reverse voltage		V_R	240	V
Peak repetitive reverse voltage		V_RRM	300	V
Forward current (continuous)		I_F	225	mA
Peak repetitive forward current		I_FRM	625	mA
Non-repetitive peak forward current	t_p = 1 s	I_FSM	4.0	A
Non-repetitive peak forward current	t_p = 1 s	I_FSM	1.0	A
Power dissipation		P_tot	350	mW

GSD2004W-V Features

• Silicon Epitaxial Planar Diode
• Fast switching diode, especially suited for applications requiring high voltage capability
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

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