Features: *Adoption of FBET, MBIT processes*Low collector-to-emitter saturation voltage*Fast switching speed*Large current capacity and wide ASOSpecifications Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO ...
GSD1624: Features: *Adoption of FBET, MBIT processes*Low collector-to-emitter saturation voltage*Fast switching speed*Large current capacity and wide ASOSpecifications Parameter Symbol Ratings...
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Parameter |
Symbol |
Ratings |
Unit |
Collector to Base Voltage |
VCBO |
60 |
V |
Collector to Emitter Voltage |
VCEO |
50 |
V |
Emitter to Base Voltage |
VEBO |
6 |
V |
Collector Current (DC) |
IC |
3 |
A |
Collector Current (PULSE)(note1) |
IC |
6 |
A |
Total Power Dissipation |
PD |
0.5 |
W |
Junction Temperature |
Tj |
+150 |
|
Storage Temperature |
Tstg |
-55 ~ +150 |