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RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD @ TC=25°C
Maximum Power Dissipation
625
W
PD @ TC=85°C
Maximum Power Dissipation
325
TJ
Operating Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
GA200NS61U Features
Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Very low conduction and switching losses HEXFRED™ antiparallel diodes with ultra- soft recovery Industry standard package UL approved
GA200NS61U Typical Application
Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing