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GA200TD120U

Features: • Generation 4 IGBT technology• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Very low conduction and switching losses• HEXFRED™antiparallel diodes with ultra- soft recovery• Industry stan...

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SeekIC No. : 004347076 Detail

GA200TD120U: Features: • Generation 4 IGBT technology• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Very low conduction and swit...

GA200TD120U Data Sheet

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Part Number:
GA200TD120U
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Generation 4 IGBT technology
• UltraFast:  Optimized for high operating  frequencies 8-40 kHz in hard switching, >200  kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft  recovery
• Industry standard package
• UL approved


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC=25°C Continuous Collector Current 200 A
ICM Pulsed Collector Current 400
ILM Peak Switching Current‚ 400
IFM Peak Diode Forward Current 400
VGE Gate-to-Emitter Voltage ±20 V
VISOL RMS Isolation Voltage, Any Terminal To 2500
PD @ TC=25°C Maximum Power Dissipation 1040 W
PD @ TC=85°C Maximum Power Dissipation 540
TJ Operating Junction Temperature Range -40 to +150 °C
TSTG Storage Temperature Range -40 to +125



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