FQI5P20, FQI630, FQI65N06 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:09+
FQI5P20, FQI630, FQI65N06 Datasheet download
Part Number: FQI5P20
MFG: --
Package Cooled: TO-262
D/C: 09+
Package Cooled:TO-262 D/C:09+
FQI5P20, FQI630, FQI65N06 Datasheet download
MFG: --
Package Cooled: TO-262
D/C: 09+
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PDF/DataSheet Download
Datasheet: FQI5P20
File Size: 646300 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI630
File Size: 777944 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI65N06
File Size: 684197 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
Symbol | Parameter |
FQB5P20 / FQI5P20 |
Units |
VDSS | Drain-Source Voltage |
-200 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-4.8 |
A |
-3.04 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
-19.2 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
330 |
mJ |
IAR | Avalanche Current (Note 1) |
-4.8 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
7.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
75 |
W | |
0.6 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Symbol | Parameter |
FQB65N06 / FQI65N06 |
Units |
VDSS | Drain-Source Voltage |
60 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
65 |
A |
46.1 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
260 |
A |
VGSS | Gate-Source Voltage |
±25 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
650 |
mJ |
IAR | Avalanche Current (Note 1) |
65 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
15.0 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
150 |
W | |
1.00 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |