FQI10N60C, FQI11N40, FQI11N40C Selling Leads, Datasheet
Package Cooled:TO-262 D/C:09+
FQI10N60C, FQI11N40, FQI11N40C Datasheet download
Part Number: FQI10N60C
MFG: --
Package Cooled: TO-262
D/C: 09+
Package Cooled:TO-262 D/C:09+
FQI10N60C, FQI11N40, FQI11N40C Datasheet download
MFG: --
Package Cooled: TO-262
D/C: 09+
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Datasheet: FQI10N60C
File Size: 628913 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI11N40
File Size: 580533 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI11N40C
File Size: 637417 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol | Parameter |
FQB10N60C / FQI10N60C |
Units |
VDSS | Drain-Source Voltage |
600 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9.5 |
A |
3.3 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
38 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
700 |
mJ |
IAR | Avalanche Current (Note 1) |
9.5 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
15.6 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
156 |
W | |
1.25 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
Symbol | Parameter |
FQB11N40 / FQI11N40 |
Units |
VDSS | Drain-Source Voltage |
400 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
11.4 |
A |
7.2 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
46 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
520 |
mJ |
IAR | Avalanche Current (Note 1) |
11.4 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
14.7 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
147 |
W | |
1.18 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol | Parameter |
FQB11N40C / FQI11N40C |
Units |
VDSS | Drain-Source Voltage |
400 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
10.5 |
A |
6.6 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
42 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
360 |
mJ |
IAR | Avalanche Current (Note 1) |
11 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
13.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
4.5 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
135 |
W | |
1.07 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |