FQI12N20, FQI12N20L, FQI12N50 Selling Leads, Datasheet
MFG:FSC Package Cooled:TO-262 D/C:T0-262
FQI12N20, FQI12N20L, FQI12N50 Datasheet download
Part Number: FQI12N20
MFG: FSC
Package Cooled: TO-262
D/C: T0-262
FQI12N20, FQI12N20L, FQI12N50
- Table of contents:
Info of FQI12N20
Info of FQI12N20L
Info of FQI12N50
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About FQI12N20L
PDF/DataSheet Download
Datasheet: FQI12N20L
File Size: 621858 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI12N20L
PDF/DataSheet Download
Datasheet: FQI12N20L
File Size: 621858 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQI12N50
PDF/DataSheet Download
Datasheet: FQI12N50
File Size: 632044 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQI12N20L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
FQI12N20L Maximum Ratings
|
Symbol |
Parameter |
FQB12N20L / FQI12N20L |
Units | |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
11.6 |
A |
|
- Continuous (TC = 100°C) |
7.35 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
46.4 |
A | |
|
VGSS |
Gate-Source Voltage |
±20 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
11.6 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
9.0 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
3.5 |
W | |
|
Power Dissipation (TC = 25°C) |
90 |
W | ||
|
- Derate above 25°C |
0.72 |
W/°C | ||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQI12N20L Features
• 11.6A, 200V, RDS(on) = 0.28 @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
FQI12N50 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction, electronic lamp ballasts based on half bridge.
FQI12N50 Maximum Ratings
| Symbol | Parameter |
FQB12N50 / FQI12N50 |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
12.1 |
A |
|
7.6 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
48.4 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
878 |
mJ |
| IAR | Avalanche Current (Note 1) |
12.1 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
17.9 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
179 |
W | |
|
1.43 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQI12N50 Features
• 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V
• Low gate charge ( typical 39 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 39 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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