FQI16N25, FQI16N25C, FQI17N08 Selling Leads, Datasheet
MFG:FSC Package Cooled:TO D/C:T0-262
FQI16N25, FQI16N25C, FQI17N08 Datasheet download
Part Number: FQI16N25
MFG: FSC
Package Cooled: TO
D/C: T0-262
MFG:FSC Package Cooled:TO D/C:T0-262
FQI16N25, FQI16N25C, FQI17N08 Datasheet download
MFG: FSC
Package Cooled: TO
D/C: T0-262
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PDF/DataSheet Download
Datasheet: FQI16N25
File Size: 770512 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQI16N25C
File Size: 891702 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQI17N08
File Size: 629108 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Symbol | Parameter |
FQB16N25C / FQI16N25C |
Units |
VDSS | Drain-Source Voltage |
250 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
15.6 |
A |
9.8 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
62.8 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
410 |
mJ |
IAR | Avalanche Current (Note 1) |
15.6 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
13.9 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
139 |
W |
1.11 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Symbol | Parameter |
FQB17N08 / FQI17N08 |
Units |
VDSS | Drain-Source Voltage |
80 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
16.5 |
A |
11.6 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
66 |
A |
VGSS | Gate-Source Voltage |
± 25 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
100 |
mJ |
IAR | Avalanche Current (Note 1) |
16.5 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
6.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
65 |
W | |
0.43 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |