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FQD7N10LTF, FQD7N20, FQD7N20L

FQD7N10LTF, FQD7N20, FQD7N20L Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-252(DPAK)  D/C:06+

FQD7N10LTF Picture

FQD7N10LTF, FQD7N20, FQD7N20L Datasheet download

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Part Number: FQD7N10LTF

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-252(DPAK)

D/C: 06+

Description: MOSFET N-CH 100V 5.8A DPAK

 

 
 
 
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  • FQD10N20CTF

  • D/C: 06+&   Adddate: 2024-06-05
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  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FQD11P06TF

  • Vendor: Fairchild Pack: SOT D/C: 09+& Qty: 1000  Adddate: 2024-06-05
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  • LanKo Electroics co,ltd   China
    Contact: Mr.lanko  
    Tel: 86-755-82500769
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    (109)

About FQD10N20

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Datasheet: FQD10N20

File Size: 590060 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FQD7N20TF

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-06-05
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
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    (0)
  • FQD10N20CTF

  • D/C: 06+&   Adddate: 2024-06-05
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FQD11P06TF

  • Vendor: Fairchild Pack: SOT D/C: 09+& Qty: 1000  Adddate: 2024-06-05
  • Inquire Now
  • LanKo Electroics co,ltd   China
    Contact: Mr.lanko  
    Tel: 86-755-82500769
    Fax: --
    (109)

About FQD7N20

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Datasheet: FQD7N20

File Size: 719385 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FQD7N20L Suppliers

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  • FQD10N20CTF

  • D/C: 06+&   Adddate: 2024-06-05
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FQD11P06TF

  • Vendor: Fairchild Pack: SOT D/C: 09+& Qty: 1000  Adddate: 2024-06-05
  • Inquire Now
  • LanKo Electroics co,ltd   China
    Contact: Mr.lanko  
    Tel: 86-755-82500769
    Fax: --
    (109)

About FQD7N20L

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Datasheet: FQD7N20L

File Size: 584663 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FQD7N10LTF Parameters

Technical/Catalog InformationFQD7N10LTF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C5.8A
Rds On (Max) @ Id, Vgs350 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds 290pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD7N10LTF
FQD7N10LTF

FQD7N20L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

FQD7N20L Maximum Ratings

   

Symbol

Parameter

FQD7N20L / FQU7N20L

Units

VDSS

Drain-Source Voltage

500

V

ID

Drain Current

- Continuous (TC = 100°C)

5.5

A

 

- Continuous (TC = 25°C)

3.48

A

IDM

Drain Current Pulsed                     (Note 1)

22

A

VGSS

Gate-Source Voltage

± 20

V

EAS

Single Pulsed Avalanche Energy            (Note 2)

73

mJ

IAR

Avalanche Current                         (Note 1)

5.5

A

EAR

Repetitive Avalanche Energy                (Note 1)

4.5

mJ

d v/dt

Peak Diode Recovery dv/dt                  (Note 3)

5.5

V/ns

PD

TJ, TSTG

Power Dissipation (TA = 25°C)

2.5

W

Power Dissipation (TC = 25°C)
- Derate above 25°C

45

W
W/°C

0.67

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds

300

°C

FQD7N20L Features

• 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 V
• Low gate charge ( typical 6.8 nC)
• Low Crss ( typical 8.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers

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