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Features: 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V Low gate charge ( typical 16 nC ) Low Crss ( typical 7 pF) Fast switching 100 % avalanche tested Improved dv/dt capabilitySpecifications Symbol Parameter FQD6N60C Units VDSS Drain-Source Voltage 600 V ID Dra...

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SeekIC No. : 004343221 Detail

FQD6N60C: Features: 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V Low gate charge ( typical 16 nC ) Low Crss ( typical 7 pF) Fast switching 100 % avalanche tested Improved dv/dt capabilitySpecifications S...

FQD6N60C Data Sheet

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Part Number:: FQD6N60C
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/21

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Product Details

Description

Features:

4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V
Low gate charge ( typical 16 nC )
Low Crss ( typical 7 pF)
Fast switching
100 % avalanche tested
Improved dv/dt capability

Specifications

Symbol	Parameter		FQD6N60C	Units
VDSS	Drain-Source Voltage		600	V
ID	Drain Current	- Continuous (TC = 100°C)	4	A
		- Continuous (TC = 25°C)	2.4	A
IDM	Drain Current Pulsed (Note 1)		16	A
VGSS	Gate-Source Voltage		± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)		300	mJ
IAR	Avalanche Current (Note 1)		4.0	A
EAR	Repetitive Avalanche Energy (Note 1)		8.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)		4.5	V/ns
PD	Power Dissipation (TC = 25°C)		80	W
	- Derate above 25°C		0.78	W/°C
TJ, TSTG	Operating and Storage Temperature Range		-55 to +150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

Description

These N-Channel enhancement mode power FQD6N60C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD6N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQD6N60C

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