FQD10N20, FQD10N20C, FQD10N20L Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:06+
FQD10N20, FQD10N20C, FQD10N20L Datasheet download
Part Number: FQD10N20
MFG: FAIRC
Package Cooled: .
D/C: 06+
FQD10N20, FQD10N20C, FQD10N20L
- Table of contents:
Info of FQD10N20
Info of FQD10N20C
Info of FQD10N20L
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About FQD10N20
PDF/DataSheet Download
Datasheet: FQD10N20
File Size: 590060 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQD10N20C
PDF/DataSheet Download
Datasheet: FQD10N20C
File Size: 603681 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQD10N20L
PDF/DataSheet Download
Datasheet: FQD10N20L
File Size: 590060 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQD10N20C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for interrupted power supplies and motor controls.
FQD10N20C Maximum Ratings
| Symbol | Parameter |
FQD10N20C / FQU10N20C |
Units |
| VDSS | Drain-Source Voltage |
200 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
7.8 |
A |
|
5.0 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
31.2 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ |
| IAR | Avalanche Current (Note 1) |
7.8 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
5.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
50 |
W |
|
0.4 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = 7.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
FQD10N20C Features
• 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQD10N20L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
FQD10N20L Maximum Ratings
|
Symbol |
Parameter |
FQD10N20L / FQU10N20L |
Units | |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
7.6 |
A |
|
|
- Continuous (TC = 100°C) |
4.8 |
A | |
|
IDM |
Drain Current Pulsed (Note 1) |
30.4 |
A | |
|
VGSS |
Gate-Source Voltage |
± 20 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
180 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
7.6 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
5.1 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
|
Power Dissipation (TC = 25°C) |
51 |
W | ||
|
- Derate above 25°C |
0.4 |
W/°C | ||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQD10N20L Features
• 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers
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