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FQD7N10, FQD7N10L, FQD7N10LTM

Table of contents:
Info of FQD7N10
Info of FQD7N10L
Info of FQD7N10LTM

FQD7N10, FQD7N10L, FQD7N10LTM Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FQD7N10, FQD7N10L, FQD7N10LTM Datasheet download

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Part Number: FQD7N10LTM

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 100V 5.8A DPAK

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FQD7N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

FQD7N10 Maximum Ratings

Symbol	Parameter		FQD7N10 / FQU7N10	Units
V_DSS	Drain-Source Voltage		100	V
I_D	Drain Current	- Continuous (TC =25°C)	5.8	A
	Drain Current	- Continuous (TC = 100°C)	3.67	A
I_DM	Drain Current Pulsed (Note 1)		23.2	A
V_GSS	Gate-Source Voltage		± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)		50	mJ
I_AR	Avalanche Current (Note 1)		5.8	A
E_AR	Repetitive Avalanche Energy (Note 1)		2.5	mJ
d _v/dt	Peak Diode Recovery dv/dt (Note 3)		6.0	V/ns
P_D	Power Dissipation (TA = 25°C)		2.5	W
	Power Dissipation (TC = 25°C)		25	W
	- Derate above 25°C		0.4	W/°C
T_{J, TSTG}	Operating and Storage Temperature Range		-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

FQD7N10 Features

• 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQD7N10L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

FQD7N10L Maximum Ratings

Symbol		Parameter		FQD7N10L / FQU7N10L	Units
VDSS		Drain-Source Voltage		100	V
ID		Drain Current	- Continuous (TC =25°C)	5.8	A
			- Continuous (TC = 100°C)	3.67	A
IDM		Drain Current Pulsed (Note 1)		23.2	A
VGSS		Gate-Source Voltage		± 20	V
EAS		Single Pulsed Avalanche Energy (Note 2)		50	mJ
IAR		Avalanche Current (Note 1)		5.8	A
EAR		Repetitive Avalanche Energy (Note 1)		2.5	mJ
dv/dt		Peak Diode Recovery dv/dt (Note 3)		6.0	V/ns
PD	Power Dissipation (TA = 25°C)			2..5	W
	Power Dissipation (TC = 25°C) - Derate above 25°C			25 0.2	W W/°C
TJ, TSTG	Operating and Storage Temperature Range			-55 to +150	°C
TL		Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

FQD7N10L Features

• 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirments allowing direct operation from logic drives

FQD7N10LTM Parameters

Technical/Catalog Information	FQD7N10LTM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	5.8A
Rds On (Max) @ Id, Vgs	350 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	290pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD7N10LTM FQD7N10LTM

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