MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:TO-252(DPAK) D/C:06+
FQD5N60CTM, FQD5NK50, FQD5P10 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: TO-252(DPAK)
D/C: 06+
Description: MOSFET N-CH 600V 2.8A DPAK
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PDF/DataSheet Download
Datasheet: FQD10N20
File Size: 590060 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQD10N20
File Size: 590060 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQD5P10
File Size: 664238 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQD5N60CTM |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 2.8A |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD5N60CTM FQD5N60CTM FQD5N60CTMCT ND FQD5N60CTMCTND FQD5N60CTMCT |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
|
Symbol |
Parameter |
FQD5P10 / FQU5P10 |
Units | ||
|
VDSS |
Drain-Source Voltage |
-100 |
V | ||
|
ID |
Drain Current |
- Continuous (TC =25°C) |
-3.6 |
A | |
|
|
- Continuous (TC = 100°C) |
-2.28 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
-14.4 |
A | ||
|
VGSS |
Gate-Source Voltage |
± 30 |
V | ||
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
55 |
mJ | ||
|
IAR |
Avalanche Current (Note 1) |
-3.6 |
A | ||
|
EAR |
Repetitive Avalanche Energy (Note 1) |
2.5 |
mJ | ||
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
-6.0 |
V/ns | ||
|
PD |
Power Dissipation (TA = 25°C) |
2..5 |
W | ||
|
Power Dissipation (TC = 25°C) |
25 |
W | |||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
°C | ||
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