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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
FQD5N20L Maximum Ratings
Symbol
Parameter
FQD5N20L / FQU5N20L
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current
- Continuous (TC = 100°C)
3.8
A
- Continuous (TC = 25°C)
2.4
A
IDM
Drain Current Pulsed(Note 1)
15.2
A
VGSS
Gate-Source Voltage
± 20
V
EAS
Single Pulsed Avalanche Energy(Note 2)
60
mJ
IAR
Avalanche Current(Note 1)
3.8
A
EAR
Repetitive Avalanche Energy(Note 1)
3,7
mJ
d v/dt
Peak Diode Recovery dv/dt(Note 3)
5.5
V/ns
PD
TJ, TSTG
Power Dissipation (TA = 25°C)
2.5
W
Power Dissipation (TC = 25°C) - Derate above 25°C
37
W W/°C
0.29
Operating and StorageTemperatureRange
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds